Post-silicon era gets closer as industry giants crack the 2D transistor scaling bottleneck with breakthrough tech — imec, ASML, and TSMC fab complementary 2D-material transistors at 50nm pitch on a 300mm wafer
… Building the transistor upside down Contact resistance has been the dominant obstacle to scaling 2D transistors because an atomically thin channel carries comparatively little current, and the junction between the metal contact and the 2D film tends to throttle whatever the channel can deliver, par… …
