Samsung Breaks the 10nm DRAM Barrier With New 4F Cell Structure That Boosts Density By Up to 50%
… The key changes that have made the new tech possible are the "4F Square Cell Structure" and a VCT Vertical Channel Transistor process. As of right now, Samsung is expected to complete the development of its 10a DRAM with these changes this year, and mass production is being slated for 2028. …