3D X-DRAM Hits Proof-of-Concept, HBM-Replacement with 10x Density vs Traditional DRAM & High-Yield Memory Design
…Unmatched Retention and Efficiency – Thanks to IGZO channel technology, 1T1C and 3T0C cell simulations demonstrate retention times of up to 450 seconds, dramatically reducing refresh power. Verified by Simulation – TCAD (Technology Computer…