ASML, TSMC, and imec Achieve 300 mm Integration of 2D-Material Transistors with 50 nm Pitch
… Thanks to the much sharper resolution of EUV lithography, we were able to create TMD transistors with channel lengths as small as 28 nm, and at a pitch compatible with the most advanced transistor nodes." added Etienne De Poortere, Director Technology Development Center Europe of ASML. /quote Sourc… …